2-677 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos hat is the vreg gnd vcc1 rf out gnd vcc2 vmode 1 2 3 4 5 6 7 8 10 9 12 11 13 bias gnd rf in gnd gnd gnd gnd RF6000-2 3v 900mhz linear amplifier module ? 3v cdma/amps cellular handsets ? 3v cdma2000/1x cellular handsets ? spread-spectrum systems ? designed for compatibility with qualcomm chipsets the RF6000-2 is a high-power, high-efficiency linear amplifier module targeting 3v handheld systems. the device is manufactured on a rf micro devices? advanced third generation gallium arseni de heterojunction bipolar transistor (hbt) process, and has been designed for use as the final rf amplifier in dual-mode 3v cdma/amps handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824mhz to 849mhz band. the RF6000-2 has a digital control line for low power application to reduce the current drain. the device is self-contained with 50 ? input and output that is matched to obtain optimum power, efficiency, and linear- ity characteristics. the module is an ultra-small 5mmx5mm land grid array with backside ground. ? advanced 3rd generation hbt process ? input/output internally matched@50 ? ? 28.5dbm linear output power ? 29db linear gain ? 45ma idle current (low power mode) ? cdma2000 compatible RF6000-2 3v 900mhz linear amplifier module RF6000-2 pcba fully assembled evaluation board 0 rev a2 021218 bottom view 1.70 1.45 0.450 0.075 dimensions in mm. 5.00 0.10 sq. 1 0.150 typ 0.000 1.150 typ 1.850 typ 2.150 typ 2.850 typ 3.850 4.150 0.150 typ 0.000 0.850 typ 1.150 typ 2.850 2.150 1.850 3.150 3.850 typ 4.150 typ 4.850 typ 1 4.850 typ 3.150 typ 1.325 1.675 1.675 1.325 0.850 typ shaded areas represent pin 1 location. 1 package style: lgm (5mmx5mm) preliminary !
preliminary 2-678 RF6000-2 rev a2 021218 absolute maximum ratings parameter rating unit supply voltage (rf off) +8.0 v dc supply voltage (p out 31dbm) +5.2 v dc control voltage (v reg )+4.2v dc input rf power +10 dbm mode voltage (v mode )+3.5v dc operating case temperature -30 to +110 c storage temperature -30 to +150 c parameter specification unit condition min. typ. max. high power state (v mode low) typical performance at v cc =3.4v, v reg =2.85v, t amb =25c, frequency=836mhz (unless otherwise specified) frequency range 824 849 mhz linear gain 29 db second harmonic -35 dbc third harmonic -35 dbc maximum linear output power 28 28.5 dbm low voltage linear output power 27 dbm v cc =3.0v total linear efficiency 38 % p out =28.5dbm (room temperature) to t a l i cc 530 ma p out =28dbm adjacent channel power rejection -50 -46 dbc acpr@885khz. p out =28dbm (is-95) -61 -58 dbc acpr@1980khz. p out =28dbm (is-95) input vswr 2:1 output vswr 10:1 no damage. 6:1 no oscillations. >-70dbc noise power -136 dbm/hz at 45mhz offset. low power state (v mode high) typical performance at v cc =3.4v, v reg =2.85v, t amb =25c, frequency=836mhz (unless otherwise specified) frequency range 824 849 mhz linear gain 20 db second harmonic -35 dbc third harmonic -35 dbc maximum linear output power 18 20 dbm total current, i cc 180 ma p out =18dbm adjacent channel power rejection -50 -46 dbc acpr@885khz. p out =18dbm (is-95) -70 -58 dbc acpr@1980khz. p out =18dbm (is-95) input vswr 2:1 output vswr 10:1 no damage. 6:1 no oscillations. >-70dbc caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
preliminary 2-679 RF6000-2 rev a2 021218 cdma2000 configuration table parameter specification unit condition min. typ. max. fm mode typical performance at v cc =3.4v, v reg =2.85v, t amb =25c, frequency=836mhz (unless otherwise specified) frequency range 824 849 mhz gain 28 db second harmonic -35 dbc third harmonic -35 dbc max cw output power 31.5 dbm total efficiency (amps mode) 48 % v cc =3.4v, v reg =2.85v, p out =31.5dbm (room temperature) input vswr 2:1 output vswr 10:1 no damage. 5:1 no oscillations. >-70dbc dc supply supply voltage range 3.2 3.4 4.2 v quiescent current 150 ma v mode =low, v reg =2.85v 45 ma v mode =high, v reg =2.85v v reg current 3 ma v mode current 250 a turn on/off time <40 sv reg switch from low to high, i cc to within 90% of the final value, p out within 1db of the final value total current (power down) 5 av reg =low, v mode =low v reg ?low? voltage 0 0.5 v v reg ?high? voltage 2.8 2.85 2.9 v v mode ?low? voltage 0 0.5 v v mode ?high? voltage 2.0 3.0 v relative gains no. configuration peak-to-average ccdf=1% pch dcch fch sch typical maximum output power (dbm) 1 dcch 9600 5.4 -3.75 0 26.5 2 fch 9600, sch0 9600 4.5 -3.75 0 0 28.0 3 dcch 9600, sch0 9600 4.5 -3.75 0 0 28.0 4 fch 9600, sch0 19200 4.5 -6.25 -2.65 0 28.0 5 fch 9600, sch0 38400 4.3 -7.5 -5.125 0 28.0 6 dcch 9600, sch0 19200 4.1 -6.25 -2.65 0 28.0 7 rc1 (is-95 reference) 3.9 28.0 8 fch 9600, sch0 76800 3.9 -9.0 -7.875 0 28.0 9 dcch 9600, sch0 38400 3.9 -7.5 -5.125 0 28.0 10 dcch 9600, sch0 76800 3.6 -9.0 -7.875 0 28.0 11 fch 9600 3.2 -3.75 0 28.0 12 fch 1500 3.2 0 -5.875 28.0 13 fch 2700 3.2 0 -2.75 28.0 14 fch 4800 3.2 0 -0.25 28.0 15 pilot only 3.2 0 28.0
preliminary 2-680 RF6000-2 rev a2 021218 pin function description interface schematic 1vcc1 first stage collector supply. a low frequency decoupling capacitor (e.g., 4.7 f) is required. 2gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. 3rf in rf input internally matched to 50 ? . this input is internally ac-coupled. 4gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. 5vreg regulated voltage supply for amplifier bias. in power down mode, both v reg and v mode need to be low (<0.5v). 6gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. 7vmode for nominal operation (high power mode), v mode is set low. when set high, devices are turned off to improve efficiency. 8gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. 9vcc2 output stage collector supply. a low frequency decoupling capacitor (e.g., 22 f) is required. 10 gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. 11 rf out rf output internally matched to 50 ? . this output is internally ac-coupled. 12 gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. 13 gnd ground connection. connect to package base ground. for best perfor- mance, keep traces physically short and connect immediately to ground plane. pkg base gnd ground connection. the backside of the package should be soldered to a top side ground pad which is connected to the ground plane with mul- tiple vias. the pad should have a short thermal path to the ground plane.
preliminary 2-681 RF6000-2 rev a2 021218 evaluation board schematic (download bill of materials from www.rfmd.com.) 1 2 3 4 5 6 7 8 10 9 12 11 13 bias vcc1 c2 4.7 f 50 ? strip j2 rf out 50 ? strip j1 rf in vreg c4 4.7 f vmode c3 4.7 f vcc2 c1 22 f
preliminary 2-682 RF6000-2 rev a2 021218 evaluation board layout board size 1.0? x 1.5? board thickness 0.042?, board material ro4003, ground plane at 0.020?, multi-layer
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